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Transistor: N-MOSFET; unipolar; 600V; 6A; 89W; PowerPAK® SO8


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Product information

Item number:
     4MD6L-SIHJ10N60E-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHJ10N60E-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 313mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±30V
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€ 3.17*
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