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Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 27A; 130W


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Product information

Item number:
     4MD6L-SIHH11N65EF-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHH11N65EF-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 8x8L
Drain-source voltage: 650V
Drain current: 7A
On-state resistance: 382mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
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