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Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHG039N60E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHG039N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: THT
Case: TO247AC
Drain-source voltage: 600V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 357W
Polarisation: unipolar
Kind of package: tube
Gate charge: 126nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 199A
Other search terms: Transistors
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€ 13.72*
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€ 14.27
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