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Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHB33N60EF-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB33N60EF-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 155nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 100A
Other search terms: SMD transistors, Transistor, Transistors
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€ 7.19*
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