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Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W

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piece

Product information

Item number:
4MD6L-SIHB22N60ET1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIHB22N60ET1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 86nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 56A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, Transistor, Transistors

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€ 4.67*

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