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Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHB12N60E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB12N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 600V
Drain current: 7.8A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 147W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 58nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Other search terms: SMD transistors, Transistor, Transistors
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€ 2.13*
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