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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A


Quantity:  packet  
Product information

Item number:
     4MD6L-SIE802DF-T1-E3
Manufacturer:
     Vishay
Manufacturer no.:
     SIE802DF-T1-E3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 160nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
An overview of the conditions1
Delivery period
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Price
from € 6,069.00*
  
Price is valid from 10 packets
1 packet contains 3,000 pieces (from € 2.023* per piece)
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Staggered prices
Order quantity
Net
Gross
Unit
1 packet
€ 6,201.75*
€ 7,628.1525
per packet
from 2 packets
€ 6,171.93*
€ 7,591.4739
per packet
from 5 packets
€ 6,096.66*
€ 7,498.8918
per packet
from 10 packets
€ 6,069.00*
€ 7,464.87
per packet
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.