Product range
My Mercateo
Sign in / Register
Basket
 
 

Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A


Quantity:  packets  
Product information

Item number:
     4MD6L-SIDR680DP-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIDR680DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
An overview of the conditions1
Delivery period
Stock level
Price
from € 9.22*
  
Price is valid from 6,000 packets
1 packet contains 5 pieces (from € 1.844* per piece)
Orders only in multiples of 600 packets
Select conditions yourself
Share itemAdd item to shopping list
Staggered prices
Order quantity
Net
Gross
Unit
from 600 packets
€ 9.45*
€ 11.6235
per packet
from 1200 packets
€ 9.42*
€ 11.5866
per packet
from 3000 packets
€ 9.28*
€ 11.4144
per packet
from 6000 packets
€ 9.22*
€ 11.3406
per packet
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.