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Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 39.6A; Idm: 80A

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packet

Product information

Item number:
4MD6L-SIDR610DP-T1-RE3

Manufacturer:
Vishay

Manufacturer no.:
SIDR610DP-T1-RE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 200V
Drain current: 39.6A
On-state resistance: 33.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, Transistor, Transistors, smd transistor

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from € 4,573.44*

Price is valid from 10 packets

1 packet contains 3,000 pieces (from € 1.52448* per piece)

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Staggered prices

Order quantity	Net	Gross	Unit

1 packet	€ 4,712.13*	€ 5,795.9199	per packet
from 2 packets	€ 4,691.49*	€ 5,770.5327	per packet
from 5 packets	€ 4,609.98*	€ 5,670.2754	per packet
from 10 packets	€ 4,573.44*	€ 5,625.3312	per packet

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