Start page > Electronics > Active components > Rectifier transistors diodes > Transistor > Power transistor > Item

Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W

Quantity:

piece

Product information

Item number:
4MD6L-SIA456DJ-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIA456DJ-T1-GE3

EAN/GTIN:
n/a

Search terms:

IGBT
Power transistor
MOSFET
MOSFET transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SC70
Drain-source voltage: 200V
Drain current: 2.6A
On-state resistance: 1.38Ω
Type of transistor: N-MOSFET
Power dissipation: 12W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 14.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 2A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistor, SMD transistors, Transistor, Transistors

An overview of the conditions¹

Delivery period

Stock level

Price

€ 1.14*

Select conditions yourself

Share item

Add item to shopping list

Staggered prices

Order quantity	Net	Gross	Unit

1 piece	€ 1.14*	€ 1.40	per piece
from 10 pieces	€ 0.87*	€ 1.07	per piece
from 50 pieces	€ 0.79*	€ 0.97	per piece
from 100 pieces	€ 0.58*	€ 0.71	per piece
from 250 pieces	€ 0.53*	€ 0.65	per piece
from 500 pieces	€ 0.50*	€ 0.62	per piece
from 1000 pieces	€ 0.49*	€ 0.60	per piece
from 100000 pieces	€ 0.43*	€ 0.53	per piece

General Terms and Conditions

Imprint

Privacy

Privacy Settings

* Prices with asterisk are net prices excl. statutory VAT.

Our offer is only aimed at companies, public institutions and freelancers.