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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A


Quantity:  pieces  
Product information

Item number:
     4MD6L-SIA400EDJ-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA400EDJ-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 19.2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 36nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
An overview of the conditions1
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from € 0.30*
  
Price is valid from 90,000 pieces
Minimum order quantity: 3 pieces
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from 3 pieces
€ 0.55*
€ 0.68
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from 25 pieces
€ 0.50*
€ 0.62
per piece
from 30 pieces
€ 0.48*
€ 0.59
per piece
from 100 pieces
€ 0.43*
€ 0.53
per piece
from 150 pieces
€ 0.41*
€ 0.50
per piece
from 300 pieces
€ 0.39*
€ 0.48
per piece
from 500 pieces
€ 0.35*
€ 0.43
per piece
from 90000 pieces
€ 0.30*
€ 0.37
per piece
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