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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W

Quantity:

packets

Product information

Item number:
4MD6L-SIA106DJ-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIA106DJ-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 22.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 13.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, smd transistor

An overview of the conditions¹

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from € 2.07*

Price is valid from 300,000 packets

1 packet contains 5 pieces (from € 0.414* per piece)

Orders only in multiples of 600 packets

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Staggered prices

Order quantity	Net	Gross	Unit

from 600 packets	€ 2.15*	€ 2.6445	per packet
from 1200 packets	€ 2.14*	€ 2.6322	per packet
from 3000 packets	€ 2.11*	€ 2.5953	per packet
from 6000 packets	€ 2.09*	€ 2.5707	per packet
from 300000 packets	€ 2.07*	€ 2.5461	per packet

* Prices with asterisk are net prices excl. statutory VAT.

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