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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A


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Product information

Item number:
     4MD6L-SI4447ADY-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI4447ADY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SO8
Drain-source voltage: -40V
Drain current: -7.2A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Other search terms: power transistor
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