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Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8


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Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Item number:
     4MD6L-SI4435DYTRPBF
Manufacturer:
     Infineon
Manufacturer no.:
     SI4435DYTRPBF
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -6.4A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Other search terms: power mosfet
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