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Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8


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Product information

Item number:
     4MD6L-SI4435DY
Manufacturer:
     onsemi
Manufacturer no.:
     SI4435DY
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 24nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
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