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Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A


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Product information

Item number:
     4MD6L-SI3552DV-T1-E3
Manufacturer:
     Vishay
Manufacturer no.:
     SI3552DV-T1-E3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
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