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Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A


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Product information

Item number:
     4MD6L-SI3437DV-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI3437DV-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: -150V
Drain current: -1.4A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -5A
Other search terms: power mosfet
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