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Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23


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Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Item number:
     4MD6L-SI2371EDS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2371EDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -4.8A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
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