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Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 25A; 1.6W; SOT23


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Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 25A; 1.6W; SOT23
Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 25A; 1.6W; SOT23
Item number:
     4MD6L-SI2338DS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2338DS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
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