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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A

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piece

Product information

Item number:
4MD6L-SI2319DS-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SI2319DS-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor

Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -40V
Drain current: -3A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

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€ 0.83*

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Order quantity	Net	Gross	Unit

1 piece	€ 0.83*	€ 1.02	per piece
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