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Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23


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Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Item number:
     4MD6L-SI2307CDS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2307CDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.2A
On-state resistance: 138mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 6.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
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from € 0.148*
  
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Minimum order quantity: 3 pieces
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€ 0.214*
€ 0.26322
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€ 0.182*
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€ 0.18204
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