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Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23


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Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Item number:
     4MD6L-SI2301BDS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2301BDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
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