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Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW


Quantity:  piece  
Product information

Item number:
     4MD6L-SI1024X-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI1024X-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SC89;SOT563
Drain-source voltage: 20V
Drain current: 515mA
On-state resistance: 1.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 0.75nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: 0.65A
Other search terms: SMD transistors, Transistor, Transistors
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