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Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair


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Product information

Item number:
     4MD6L-SI1016CX-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI1016CX-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SC89;SOT563
Drain-source voltage: 20/-20V
Drain current: 0.49/-0.49A
On-state resistance: 396/756mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.14W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 2/2.5nC
Technology: TrenchFET®
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A
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