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Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W


Quantity:  piece  
Product information

Item number:
     4MD6L-SGT120R65AL
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     SGT120R65AL
EAN/GTIN:
     n/a
Search terms:
Dual transistor
Junction FET transistor
SMD transistor
SMD transistors
Manufacturer: STMicroelectronics
Mounting: SMD
Case: PowerFLAT 5x6
Drain-source voltage: 650V
Drain current: 9A
On-state resistance: 0.12Ω
Type of transistor: N-JFET
Power dissipation: 192W
Polarisation: unipolar
Kind of package: tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 3nC
Technology: GaN
Kind of transistor: HEMT
Kind of channel: enhanced
Gate-source voltage: -10...7V
Pulsed drain current: 36A
Other search terms: smd transistor
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