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Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W

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piece

Product information

Item number:
4MD6L-SGT120R65AL

Manufacturer:
ST Microelectronics

Manufacturer no.:
SGT120R65AL

EAN/GTIN:
n/a

Search terms:

Dual transistor
Junction FET transistor
Power transistor
MOSFET

Manufacturer: STMicroelectronics
Mounting: SMD
Case: PowerFLAT 5x6
Drain-source voltage: 650V
Drain current: 9A
On-state resistance: 0.12Ω
Type of transistor: N-JFET
Power dissipation: 192W
Polarisation: unipolar
Kind of package: tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 3nC
Technology: GaN
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10...7V
Pulsed drain current: 36A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: MOSFET transistor, SMD transistor, SMD transistors, Transistor, Transistors

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€ 5.38*

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Order quantity	Net	Gross	Unit

1 piece	€ 5.38*	€ 6.62	per piece
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