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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W


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Product information

Item number:
     4MD6L-SCT2H12NZGC11
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     SCT2H12NZGC11
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: ROHM SEMICONDUCTOR
Mounting: THT
Case: TO3PFM
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 14nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 9.2A
Other search terms: Transistors, power transistor
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