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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W


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Product information

Item number:
     4MD6L-SCT2160KEGC11
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     SCT2160KEGC11
EAN/GTIN:
     n/a
Manufacturer: ROHM SEMICONDUCTOR
Mounting: THT
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 208mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 55A
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