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Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247


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Product information

Item number:
     4MD6L-R6030JNZ4C13
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     R6030JNZ4C13
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: ROHM SEMICONDUCTOR
Mounting: THT
Case: TO247
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 143mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Other search terms: Transistors, power transistor
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