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Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W


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Product information

Item number:
     4MD6L-PSMN8R9-100BSEJ
Manufacturer:
     Nexperia
Manufacturer no.:
     PSMN8R9-100BSEJ
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: D2PAK;SOT404
Drain-source voltage: 100V
Drain current: 74A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 296W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 419A
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