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Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW


Quantity:  piece  
Product information

Item number:
     4MD6L-PMZB290UNE2YL
Manufacturer:
     Nexperia
Manufacturer no.:
     PMZB290UNE2YL
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Attention!
This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity.

Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT883B;DFN1006B-3
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 4A
Other search terms: SMD transistors, Transistor, Transistors
An overview of the conditions1
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€ 0.2912*
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€ 0.2912*
€ 0.35818
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€ 0.22694
per piece
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€ 0.1615*
€ 0.19865
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€ 0.1492*
€ 0.18352
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€ 0.0958*
€ 0.11783
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€ 0.0683*
€ 0.08401
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€ 0.0665*
€ 0.0818
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€ 0.0546*
€ 0.06716
per piece
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