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Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA


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Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA
Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA
Item number:
     4MD6L-PMV65XPEAR
Manufacturer:
     Nexperia
Manufacturer no.:
     PMV65XPEAR
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: -20V
Drain current: -1.8A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Kind of channel: enhanced
Pulsed drain current: -120mA
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