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Transistor: N-MOSFET; unipolar; 20V; 8.6A; Idm: 27A; 510mW


Quantity:  piece  
Product information

Item number:
     4MD6L-PMV16XNR
Manufacturer:
     Nexperia
Manufacturer no.:
     PMV16XNR
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: 20V
Drain current: 8.6A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 510mW
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 13.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27A
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