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Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A


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Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Item number:
     4MD6L-PMN30XPX
Manufacturer:
     Nexperia
Manufacturer no.:
     PMN30XPX
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SC74;SOT457;TSOP6
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.55W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 23nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
An overview of the conditions1
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from € 0.125*
  
Price is valid from 7,500,000 pieces
Minimum order quantity: 3 pieces
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€ 0.24969
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€ 0.19*
€ 0.2337
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€ 0.186*
€ 0.22878
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€ 0.154*
€ 0.18942
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€ 0.15375
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