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Transistor: N-MOSFET; unipolar; 60V; 190mA; Idm: 1.2A; 0.83W


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Product information

Item number:
     4MD6L-PMBF170.215
Manufacturer:
     Nexperia
Manufacturer no.:
     PMBF170,215
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: 60V
Drain current: 0.19A
On-state resistance: 9.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.83W
Polarisation: unipolar
Kind of package: tape;reel
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
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