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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W


Quantity:  piece  
Product information

Item number:
     4MD6L-NTH4L080N120SC1
Manufacturer:
     onsemi
Manufacturer no.:
     NTH4L080N120SC1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: ONSEMI
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 21A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 125A
Other search terms: Transistors
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€ 16.18*
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