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Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220


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Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220
Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220
Item number:
     4MD6L-NTE2391
Manufacturer:
     NTE Electronics
Manufacturer no.:
     NTE2391
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: NTE Electronics
Mounting: THT
Case: TO220
Drain-source voltage: -100V
Drain current: -29A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
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