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Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W; TO220


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Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W; TO220
Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W; TO220
Item number:
     4MD6L-NTE2373
Manufacturer:
     NTE Electronics
Manufacturer no.:
     NTE2373
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: NTE Electronics
Mounting: THT
Case: TO220
Drain-source voltage: -200V
Drain current: -6.8A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -44A
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