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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W


Quantity:  piece  
Product information

Item number:
     4MD6L-NSF040120L3A0Q
Manufacturer:
     Nexperia
Manufacturer no.:
     NSF040120L3A0Q
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: NEXPERIA
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Gate charge: 95nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Other search terms: Transistors
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