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IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA


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IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Item number:
     4MD6L-NCP5111DR2G
Manufacturer:
     onsemi
Manufacturer no.:
     NCP5111DR2G
EAN/GTIN:
     n/a
Search terms:
IGBT
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: ONSEMI
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...20V DC
Output current: -500...250mA
Type of integrated circuit: driver
Impulse rise time: 160ns
Pulse fall time: 75ns
Number of channels: 2
Kind of package: tape;reel
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side;gate driver
Topology: IGBT half-bridge;MOSFET half-bridge
Voltage class: 600V
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from € 0.66*
  
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