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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W


Quantity:  piece  
Product information

Item number:
     4MD6L-MXP120A080FL-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     MXP120A080FL-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
Power dissipation: 56W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 47.3nC
Technology: SiC;MaxSiC™
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 58A
Other search terms: Transistors
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€ 10.93*
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