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Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3


Quantity:  piece  
Product information

Item number:
     4MD6L-MG35P12P3-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     MG35P12P3
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: YANGJIE TECHNOLOGY
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Application: motors;Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: three-phase diode bridge;IGBT half-bridge x3;NTC thermistor;boost chopper
Other search terms: diode module
An overview of the conditions1
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Price
from € 27.73*
  
Price is valid from 3,000 pieces
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Order quantity
Net
Gross
Unit
1 piece
€ 43.88*
€ 53.97
per piece
from 2 pieces
€ 42.30*
€ 52.03
per piece
from 3 pieces
€ 38.07*
€ 46.83
per piece
from 5 pieces
€ 37.01*
€ 45.52
per piece
from 10 pieces
€ 32.48*
€ 39.95
per piece
from 20 pieces
€ 31.13*
€ 38.29
per piece
from 24 pieces
€ 30.81*
€ 37.90
per piece
from 3000 pieces
€ 27.73*
€ 34.11
per piece
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