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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 70A; 300W


Quantity:  piece  
Product information

Item number:
     4MD6L-LGE3M80120Q
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M80120Q
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 31A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 76nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 70A
Other search terms: Transistors
An overview of the conditions1
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€ 13.36*
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Net
Gross
Unit
1 piece
€ 13.36*
€ 16.43
per piece
from 2 pieces
€ 13.18*
€ 16.21
per piece
from 3 pieces
€ 11.85*
€ 14.58
per piece
from 5 pieces
€ 11.41*
€ 14.03
per piece
from 10 pieces
€ 9.65*
€ 11.87
per piece
from 20 pieces
€ 9.55*
€ 11.75
per piece
from 30 pieces
€ 9.17*
€ 11.28
per piece
from 120 pieces
€ 8.70*
€ 10.70
per piece
from 3000 pieces
€ 7.39*
€ 9.09
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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