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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W


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Product information

Item number:
     4MD6L-LGE3M80120B
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M80120B
EAN/GTIN:
     n/a
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 28A
On-state resistance: 0.129Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Gate charge: 76nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
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