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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W


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Product information

Item number:
     4MD6L-LGE3M50120B
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M50120B
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 43A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 327W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 145A
Other search terms: Transistors
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€ 17.52*
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€ 19.24
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