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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W


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Product information

Item number:
     4MD6L-LGE3M45170Q
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M45170Q
EAN/GTIN:
     n/a
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
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from € 39.60*
  
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