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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W

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piece

Product information

Item number:
4MD6L-LGE3M25120Q

Manufacturer:
LUGUANG ELECTRONIC

Manufacturer no.:
LGE3M25120Q

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
Transistor

Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 200A

... > Unipolar transistors > N channel transistors > THT N channel transistors

Other search terms: Transistors

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€ 26.71*

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Order quantity	Net	Gross	Unit

1 piece	€ 26.71*	€ 32.85	per piece
from 2 pieces	€ 26.06*	€ 32.05	per piece
from 3 pieces	€ 23.38*	€ 28.76	per piece
from 5 pieces	€ 22.27*	€ 27.39	per piece
from 10 pieces	€ 19.52*	€ 24.01	per piece
from 20 pieces	€ 19.23*	€ 23.65	per piece
from 30 pieces	€ 18.40*	€ 22.63	per piece
from 120 pieces	€ 17.43*	€ 21.44	per piece
from 3000 pieces	€ 15.01*	€ 18.46	per piece

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