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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W

Quantity:

piece

Product information

Item number:
4MD6L-LGE3M160120B

Manufacturer:
LUGUANG ELECTRONIC

Manufacturer no.:
LGE3M160120B

EAN/GTIN:
n/a

Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 14A
On-state resistance: 0.285Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 48A

... > Unipolar transistors > N channel transistors > THT N channel transistors

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Order quantity	Net	Gross	Unit

1 piece	€ 11.31*	€ 13.91	per piece
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from 20 pieces	€ 8.13*	€ 10.00	per piece
from 30 pieces	€ 7.80*	€ 9.59	per piece
from 120 pieces	€ 7.31*	€ 8.99	per piece
from 3000 pieces	€ 6.24*	€ 7.68	per piece

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