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Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268


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Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Item number:
     4MD6L-IXTT10N100D
Manufacturer:
     IXYS
Manufacturer no.:
     IXTT10N100D
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: IXYS
Mounting: SMD
Case: TO268
Reverse recovery time: 850ns
Drain-source voltage: 1kV
Drain current: 10A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Kind of channel: depleted
Gate-source voltage: ±30V
Pulsed drain current: 20A
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