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Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns


Quantity:  piece  
Product information

Item number:
     4MD6L-IXTR210P10T
Manufacturer:
     IXYS
Manufacturer no.:
     IXTR210P10T
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: IXYS
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 200ns
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
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€ 35.87*
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