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Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W


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Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Item number:
     4MD6L-IXTP4N80P
Manufacturer:
     IXYS
Manufacturer no.:
     IXTP4N80P
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: IXYS
Mounting: THT
Case: TO220AB
Reverse recovery time: 560ns
Drain-source voltage: 800V
Drain current: 3.6A
On-state resistance: 3.4Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 14.2nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 8A
Other search terms: Transistors, power transistor
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